Advanced materials
Ga₂O₃ Epi Wafer

Ga₂O₃Epitaxial Growth by HVPE
Characteristics
Property | Specification |
---|---|
Dopant | Si(n-type) |
Doping concentration | Specify a value in the range between 2×1016 and 9×1016 cm-3 |
Thickness | Specify a value in the range between 5 and 10㎛ |

- Power Devices, Inverter
- Electric Vehicle
- Solar Panel
- DUV Emitter
- UVC Detector