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Lighting Technology Innovator

Visible Light Converting Materials
High Power Lighting Components
Next Generation Devices & Materials

Worldwide classed Manufacturing Infrastructure and Quality Assurance

Lighting Technology Innovator

Visible Light Converting Materials
High Power Lighting Components
Next Generation Devices & Materials

Worldwide classed Manufacturing Infrastructure and Quality Assurance

Lighting Technology Innovator

Visible Light Converting Materials
High Power Lighting Components
Next Generation Devices & Materials

Worldwide classed Manufacturing Infrastructure and Quality Assurance

Advanced materials Ga₂O₃ Epi Wafer

Ga₂O₃Epitaxial Growth by HVPE

Characteristics

Property Specification
Dopant Si(n-type)
Doping concentration Specify a value in the range between 2×1016 and 9×1016 cm-3
Thickness Specify a value in the range between 5 and 10㎛

    Application field

  • Power Devices, Inverter
  • Electric Vehicle
  • Solar Panel
  • DUV Emitter
  • UVC Detector